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 Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * Low thermal resistance
BYQ30E, BYQ30EB, BYQ30ED series
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V VF 0.95 V IO(AV) = 16 A IRRM = 0.2 A trr 25 ns
a1 1 k2
a2 3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ30E series is supplied in the SOT78 conventional leaded package. The BYQ30EB series is supplied in the SOT404 surface mounting package. The BYQ30ED series is supplied in the SOT428 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 cathode 1 anode 2 cathode
SOT78 (TO220AB)
tab
SOT404
tab
SOT428
tab
2
1 23
2
1
3
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM IRRM IRSM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Peak non-repetitive reverse surge current per diode Operating junction temperature Storage temperature square wave; = 0.5; Tmb 104 C square wave; = 0.5; Tmb 104 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) tp = 2 s; = 0.001 tp = 100 s CONDITIONS BYQ30E/ BYQ30EB/ BYQ30ED - 40 MIN. -150 150 150 150 16 16 80 88 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A C C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
October 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS
BYQ30E, BYQ30EB, BYQ30ED series
MIN. -
MAX. 8
UNIT kV
Human body model; C = 250 pF; R = 1.5 k
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes SOT78 package, in free air SOT404 and SOT428 packages, pcb mounted, minimum footprint, FR4 board MIN. TYP. MAX. UNIT 60 50 3 2.5 K/W K/W K/W K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Qrr trr1 trr2 Vfr Forward voltage Reverse current Reverse recovered charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150C IF = 16 A; Tj = 150C IF = 16 A VR = VRWM VR = VRWM; Tj = 100C IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s MIN. TYP. MAX. UNIT 0.84 1 1.12 4 0.3 4 20 12 1 0.95 1.15 1.25 30 0.6 11 25 22 V V V A mA nC ns ns V
October 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYQ30E, BYQ30EB, BYQ30ED series
I
dI F dt
R
F
t
rr time
D.U.T. Voltage Pulse Source
Q I R I
s
10%
100%
Current shunt
to 'scope
rrm
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Circuit schematic for trr2
I
F
0.5A IF 0A
time VF
IR
I rec = 0.25A
V VF time
fr
I = 1A R
trr2
Fig.2. Definition of Vfr
Fig.5. Definition of trr2
12 10 8 6 4 2
Forward dissipation, PF (W) BYQ30 Vo = 0.75 V Rs = 0.025 Ohms 0.5 0.2 0.1
I tp
Tmb(max) / C D = 1.0
114 120 126 132
12 10 8
Forward dissipation, PF (W) BYQ30 Vo = 0.75 V Rs 0.025 Ohms
Tmb(max) / C
114 120
a = 1.57 1.9 2.2 2.8 6 4 2 0 4 132 138 144 150 8 126
D=
tp T t
138 144 150 12
T
0
0
2
4 6 8 Average forward current, IF(AV) (A)
10
0
1
2 3 4 5 6 Average forward current, IF(AV) (A)
7
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
October 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYQ30E, BYQ30EB, BYQ30ED series
trr / ns 1000
100 Qs / nC
100
IF=10A
IF=10A 5A 2A 1A 10
IF=1A 10
1
1.0
1 10 dIF/dt (A/us) 100
1.0
10 -dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 C; per diode
Fig.10. Maximum Qs at Tj = 25 C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A 1 IF=1A
1
0.1
0.1
0.01
P D tp D= tp T t
0.01 1 10 -dIF/dt (A/us) 100
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BYQ30E
10s
Fig.8. Maximum Irrm at Tj = 25 C; per diode
Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp).
20
Forward current, IF (A) Tj = 25 C Tj = 150 C
BYQ30
15
10 typ 5
max
0
0
0.5
1 1.5 Forward voltage, VF (V)
2
Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj
October 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BYQ30E, BYQ30EB, BYQ30ED series
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 1.4 g
10.3 max
BYQ30E, BYQ30EB, BYQ30ED series
4.5 max 1.4 max
11 max 15.4
2.5 0.85 max (x2) 2.54 (x2)
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5 2.0
3.8
5.08
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes 1. Epoxy meets UL94 V0 at 1/8".
October 1998
6
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 1.1 g
6.73 max 1.1
BYQ30E, BYQ30EB, BYQ30ED series
seating plane 2.38 max 0.93 max 5.4
tab
4 min 6.22 max 10.4 max 4.6
2 1
2.285 (x2)
0.5 min
0.5 0.3 0.5
3
0.8 max (x2)
Fig.15. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15 2.5
1.5
4.57
Fig.16. SOT428 : minimum pad sizes for surface mounting.
Notes 1. Plastic meets UL94 V0 at 1/8".
October 1998
7
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYQ30E, BYQ30EB, BYQ30ED series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1998
8
Rev 1.200


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